Search
Visitors
Top 10:
Europe flag 22%Europe
United Kingdom flag 16%United Kingdom
United States flag 13%United States
Germany flag 11%Germany
Korea (South) flag 9%Korea (South)
France flag 5%France
China flag 3%China
India flag 2%India
Russia flag 2%Russia
Canada flag 1%Canada
807 visits from 48 countries

alt

Moving Cells with Integrated Semiconductor Optical Traps

Using an array of on-chip optical tweezers in fluidic channels, photolithographically created directly on a Ga-As substrate, it is possible to optically tweeze cells in a device that is no larger than a few cubic mm. Light emission is generated by electrical injection into a GaAs/AlGaAs heterostructure, whose active region contains either quantum wells (emission 980 nm) or quantum dots (emission 1290 nm). High index cladding layers around the active region provide vertical optical confinement, whilst transverse confinement is achieved by a 3 µm-wide etched ridge waveguide, producing a zero-order beam. Microfluidic channels (typically 20-75 µm wide, 10 µm deep) are etched through an array of ridges to produce two banks of perfectly aligned counter-propagating dual-beam laser traps.

Key References

(If desired, all references and pdfs may be downloaded en masse in an Endnote formatted zip file)